2N5195G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.4V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.4V @ 1A, 4A.The emitter base voltage can be kept at 5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.The part has a transition frequency of 2MHz.Maximum collector currents can be below 4A volts.

2N5195G Features

the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz

2N5195G Applications

There are a lot of ON Semiconductor 2N5195G applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting