MMBT2222ATT3G Overview

In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.A transition frequency of 300MHz is present in the part.During maximum operation, collector current can be as low as 600mA volts.

MMBT2222ATT3G Features

the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

MMBT2222ATT3G Applications

There are a lot of ON Semiconductor MMBT2222ATT3G applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting