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NJVMJD112G

NJVMJD112G

NJVMJD112G

ON Semiconductor

NJVMJD112G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVMJD112G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.75W
Element Configuration Single
Power - Max 1.75W
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A 3V
Current - Collector Cutoff (Max) 20μA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 25MHz
Frequency - Transition 25MHz
Collector Base Voltage (VCBO) 100V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
825 $0.39270 $323.9775
NJVMJD112G Product Details

NJVMJD112G Overview


In this device, the DC current gain is 1000 @ 2A 3V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 4A.The part has a transition frequency of 25MHz.A maximum collector current of 2A volts is possible.

NJVMJD112G Features


the DC current gain for this device is 1000 @ 2A 3V
the vce saturation(Max) is 3V @ 40mA, 4A
a transition frequency of 25MHz

NJVMJD112G Applications


There are a lot of ON Semiconductor NJVMJD112G applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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