NJVMJD112G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJVMJD112G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.75W
Element Configuration
Single
Power - Max
1.75W
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A 3V
Current - Collector Cutoff (Max)
20μA
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
25MHz
Frequency - Transition
25MHz
Collector Base Voltage (VCBO)
100V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
825
$0.39270
$323.9775
NJVMJD112G Product Details
NJVMJD112G Overview
In this device, the DC current gain is 1000 @ 2A 3V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 4A.The part has a transition frequency of 25MHz.A maximum collector current of 2A volts is possible.
NJVMJD112G Features
the DC current gain for this device is 1000 @ 2A 3V the vce saturation(Max) is 3V @ 40mA, 4A a transition frequency of 25MHz
NJVMJD112G Applications
There are a lot of ON Semiconductor NJVMJD112G applications of single BJT transistors.