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CMPT6429 TR PBFREE

CMPT6429 TR PBFREE

CMPT6429 TR PBFREE

Central Semiconductor Corp

CMPT6429 TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CMPT6429 TR PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Configuration Single
Power - Max 350mW
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100μA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 100MHz
Frequency - Transition 700MHz
Power Dissipation-Max (Abs) 0.35W
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.50000 $0.5
500 $0.495 $247.5
1000 $0.49 $490
1500 $0.485 $727.5
2000 $0.48 $960
2500 $0.475 $1187.5
CMPT6429 TR PBFREE Product Details

CMPT6429 TR PBFREE Overview


In this device, the DC current gain is 500 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.As a result, the part has a transition frequency of 100MHz.Device displays Collector Emitter Breakdown (45V maximal voltage).

CMPT6429 TR PBFREE Features


the DC current gain for this device is 500 @ 100μA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 100MHz

CMPT6429 TR PBFREE Applications


There are a lot of Central Semiconductor Corp CMPT6429 TR PBFREE applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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