MMBT5210 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100μA 5V.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 4.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).30MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 50V volts.A maximum collector current of 100mA volts can be achieved.

MMBT5210 Features

the DC current gain for this device is 200 @ 100μA 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 500mA
a transition frequency of 30MHz

MMBT5210 Applications

There are a lot of ON Semiconductor MMBT5210 applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter