MSB710-RT1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 150mA 10V.A collector emitter saturation voltage of -600mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 30mA, 300mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Collector current can be as low as 500mA volts at its maximum.

MSB710-RT1G Features

the DC current gain for this device is 120 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 7V
the current rating of this device is -500mA

MSB710-RT1G Applications

There are a lot of ON Semiconductor MSB710-RT1G applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting