MMBT5401LT3 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT5401LT3 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn80Pb20)
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
-150V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MMBT5401
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
150V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-500mV
Collector Base Voltage (VCBO)
-160V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MMBT5401LT3 Product Details
MMBT5401LT3 Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.100MHz is present in the transition frequency.Collector current can be as low as 500mA volts at its maximum.
MMBT5401LT3 Features
the DC current gain for this device is 60 @ 10mA 5V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is -500mA a transition frequency of 100MHz
MMBT5401LT3 Applications
There are a lot of ON Semiconductor MMBT5401LT3 applications of single BJT transistors.