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MMBT5401LT3

MMBT5401LT3

MMBT5401LT3

ON Semiconductor

MMBT5401LT3 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT5401LT3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC -150V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -500mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MMBT5401
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) -160V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
MMBT5401LT3 Product Details

MMBT5401LT3 Overview


This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.100MHz is present in the transition frequency.Collector current can be as low as 500mA volts at its maximum.

MMBT5401LT3 Features


the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 100MHz

MMBT5401LT3 Applications


There are a lot of ON Semiconductor MMBT5401LT3 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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