MMBTA13LT1G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is recommended to keep the continuous collector voltage at 300mA in order to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 300mA for this device.As you can see, the part has a transition frequency of 125MHz.As a result, it can handle voltages as low as 30V volts.Maximum collector currents can be below 300mA volts.

MMBTA13LT1G Features

the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz

MMBTA13LT1G Applications

There are a lot of ON Semiconductor MMBTA13LT1G applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter