MMJT9410T1 Overview
This device has a DC current gain of 85 @ 800mA 1V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 150mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 300mA, 3A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.72MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 30V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
MMJT9410T1 Features
the DC current gain for this device is 85 @ 800mA 1V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 72MHz
MMJT9410T1 Applications
There are a lot of ON Semiconductor MMJT9410T1 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
