MPS3646G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 30mA 400mV DC current gain.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 30mA, 300mA.Emitter base voltages of 5V can achieve high levels of efficiency.This device has a current rating of 300mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 350MHz.During maximum operation, collector current can be as low as 300mA volts.
MPS3646G Features
the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 350MHz
MPS3646G Applications
There are a lot of ON Semiconductor MPS3646G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
