MPS3646RLRA Overview

In this device, the DC current gain is 30 @ 30mA 400mV, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 30mA, 300mA means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 300mA for this device.A transition frequency of 350MHz is present in the part.A maximum collector current of 300mA volts is possible.

MPS3646RLRA Features

the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 350MHz

MPS3646RLRA Applications

There are a lot of ON Semiconductor MPS3646RLRA applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver