BC549A B1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
BC549A B1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
500mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
100mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BC549A B1G Product Details
BC549A B1G Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.There is no device package available from the supplier for this product.The device has a 30V maximal voltage - Collector Emitter Breakdown.
BC549A B1G Features
the DC current gain for this device is 110 @ 2mA 5V the supplier device package of TO-92
BC549A B1G Applications
There are a lot of Taiwan Semiconductor Corporation BC549A B1G applications of single BJT transistors.