MPS6652G Overview
This device has a DC current gain of 50 @ 500mA 1V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 4V allows for a high level of efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In the part, the transition frequency is 100MHz.A maximum collector current of 1A volts is possible.
MPS6652G Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is -1A
a transition frequency of 100MHz
MPS6652G Applications
There are a lot of ON Semiconductor MPS6652G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
