MPSW55RLRA Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 250mA 1V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 250mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).Parts of this part have transition frequencies of 50MHz.Collector current can be as low as 500mA volts at its maximum.

MPSW55RLRA Features

the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz

MPSW55RLRA Applications

There are a lot of ON Semiconductor MPSW55RLRA applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter