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MPS6652RLRAG

MPS6652RLRAG

MPS6652RLRAG

ON Semiconductor

MPS6652RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPS6652RLRAG Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating-1A
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MPS6652
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625W
Power - Max 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage40V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage600mV
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 4V
hFE Min 50
Turn Off Time-Max (toff) 75ns
Turn On Time-Max (ton) 280ns
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2177 items

MPS6652RLRAG Product Details

MPS6652RLRAG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 500mA 1V.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 4V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.As a result, the part has a transition frequency of 100MHz.A maximum collector current of 1A volts is possible.

MPS6652RLRAG Features


the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is -1A
a transition frequency of 100MHz

MPS6652RLRAG Applications


There are a lot of ON Semiconductor MPS6652RLRAG applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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