MPS6652RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MPS6652RLRAG Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
-40V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MPS6652
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
625W
Power - Max
625mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
600mV
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
4V
hFE Min
50
Turn Off Time-Max (toff)
75ns
Turn On Time-Max (ton)
280ns
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
MPS6652RLRAG Product Details
MPS6652RLRAG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 500mA 1V.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 4V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.As a result, the part has a transition frequency of 100MHz.A maximum collector current of 1A volts is possible.
MPS6652RLRAG Features
the DC current gain for this device is 50 @ 500mA 1V a collector emitter saturation voltage of 600mV the vce saturation(Max) is 600mV @ 100mA, 1A the emitter base voltage is kept at 4V the current rating of this device is -1A a transition frequency of 100MHz
MPS6652RLRAG Applications
There are a lot of ON Semiconductor MPS6652RLRAG applications of single BJT transistors.