KSA1201YTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSA1201YTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-F3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
120V
Current - Collector (Ic) (Max)
800mA
Transition Frequency
120MHz
Frequency - Transition
120MHz
RoHS Status
ROHS3 Compliant
KSA1201YTF Product Details
KSA1201YTF Overview
In this device, the DC current gain is 120 @ 100mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A transition frequency of 120MHz is present in the part.Detection of Collector Emitter Breakdown at 120V maximal voltage is present.
KSA1201YTF Features
the DC current gain for this device is 120 @ 100mA 5V the vce saturation(Max) is 1V @ 50mA, 500mA a transition frequency of 120MHz
KSA1201YTF Applications
There are a lot of Rochester Electronics, LLC KSA1201YTF applications of single BJT transistors.