BC846BT,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website
SOT-23
BC846BT,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC846
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
150mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
65V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
100MHz
Frequency - Transition
100MHz
Power Dissipation-Max (Abs)
0.15W
RoHS Status
ROHS3 Compliant
BC846BT,115 Product Details
BC846BT,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 100mA.In the part, the transition frequency is 100MHz.Detection of Collector Emitter Breakdown at 65V maximal voltage is present.
BC846BT,115 Features
the DC current gain for this device is 200 @ 2mA 5V the vce saturation(Max) is 400mV @ 5mA, 100mA a transition frequency of 100MHz
BC846BT,115 Applications
There are a lot of NXP USA Inc. BC846BT,115 applications of single BJT transistors.