2N6427RLRA Overview

DC current gain in this device equals 20000 @ 100mA 5V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 1.2V allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500μA, 500mA.A constant collector voltage of 500mA is necessary for high efficiency.Emitter base voltages of 12V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).As you can see, the part has a transition frequency of 130MHz.Maximum collector currents can be below 500mA volts.

2N6427RLRA Features

the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 130MHz

2N6427RLRA Applications

There are a lot of ON Semiconductor 2N6427RLRA applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface