BC80725MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -700mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a transition frequency of 100MHz in the part.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
BC80725MTF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC80725MTF Applications
There are a lot of ON Semiconductor BC80725MTF applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
