MPS8599 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MPS8599 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MPS8599
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
80V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
400mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MPS8599 Product Details
Description
The MPS8599 is a Voltage and Current are Negative for PNP Transistor. One n-type material is doped with two p-type materials in a PNP transistor. It's a device that's powered by electricity. The modest quantity of base current regulated both the emitter and collector currents. In the PNP transistor, two crystal diodes are coupled back-to-back.