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MPSA18RLRM

MPSA18RLRM

MPSA18RLRM

ON Semiconductor

MPSA18RLRM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSA18RLRM Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 1998
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 200mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MPSA18
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 160MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 160MHz
Collector Emitter Saturation Voltage 80mV
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 6.5V
hFE Min 400
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
MPSA18RLRM Product Details

MPSA18RLRM Overview


This device has a DC current gain of 500 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 80mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.Emitter base voltages of 6.5V can achieve high levels of efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 160MHz.The maximum collector current is 200mA volts.

MPSA18RLRM Features


the DC current gain for this device is 500 @ 10mA 5V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6.5V
the current rating of this device is 200mA
a transition frequency of 160MHz

MPSA18RLRM Applications


There are a lot of ON Semiconductor MPSA18RLRM applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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