MPSA44RL1G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 10mA 10V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 750mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).An input voltage of 400V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 300mA volts.

MPSA44RL1G Features

the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA

MPSA44RL1G Applications

There are a lot of ON Semiconductor MPSA44RL1G applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter