BC547B A1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
BC547B A1G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Box (TB)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
500mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BC547B A1G Product Details
BC547B A1G Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.Supplier package TO-92 contains the product.There is a 45V maximal voltage in the device due to collector-emitter breakdown.
BC547B A1G Features
the DC current gain for this device is 200 @ 2mA 5V the supplier device package of TO-92
BC547B A1G Applications
There are a lot of Taiwan Semiconductor Corporation BC547B A1G applications of single BJT transistors.