MPSA55RLRAG Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 4V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.Collector current can be as low as 500mA volts at its maximum.

MPSA55RLRAG Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz

MPSA55RLRAG Applications

There are a lot of ON Semiconductor MPSA55RLRAG applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting