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MPSW51A

MPSW51A

MPSW51A

ON Semiconductor

MPSW51A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSW51A Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2009
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -1A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MPSW51A
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 40V
Current - Collector (Ic) (Max) 1A
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -700mV
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) 5V
hFE Min 55
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
MPSW51A Product Details

MPSW51A Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 100mA 1V.A collector emitter saturation voltage of -700mV allows maximum design flexibility.A VCE saturation (Max) of 700mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.As a result, the part has a transition frequency of 50MHz.When collector current reaches its maximum, it can reach 1A volts.

MPSW51A Features


the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz

MPSW51A Applications


There are a lot of ON Semiconductor MPSW51A applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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