MPSW51A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MPSW51A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2009
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.75
Subcategory
Other Transistors
Voltage - Rated DC
-40V
Max Power Dissipation
1W
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-1A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MPSW51A
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
700mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
40V
Current - Collector (Ic) (Max)
1A
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-700mV
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
5V
hFE Min
55
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MPSW51A Product Details
MPSW51A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 100mA 1V.A collector emitter saturation voltage of -700mV allows maximum design flexibility.A VCE saturation (Max) of 700mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.As a result, the part has a transition frequency of 50MHz.When collector current reaches its maximum, it can reach 1A volts.
MPSW51A Features
the DC current gain for this device is 60 @ 100mA 1V a collector emitter saturation voltage of -700mV the vce saturation(Max) is 700mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is -1A a transition frequency of 50MHz
MPSW51A Applications
There are a lot of ON Semiconductor MPSW51A applications of single BJT transistors.