MPSW51ARLRAG Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 100mA 1V.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.A VCE saturation (Max) of 700mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

MPSW51ARLRAG Features

the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 50MHz

MPSW51ARLRAG Applications

There are a lot of ON Semiconductor MPSW51ARLRAG applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver