MTB50P03HDLT4

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Manufacturer part number:MTB50P03HDLT4

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 30V 50A D2PAK

Case Package:SOT-23

Datasheet:MTB50P03HDLT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Packaging	Cut Tape (CT)
Published	2006
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Voltage - Rated DC	-30V
Max Power Dissipation	2.5W
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	-50A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 25A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 5V
Rise Time	340ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	218 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	15V
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	-30V
Avalanche Energy Rating (Eas)	1250 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead