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MUN5215T1G

MUN5215T1G

MUN5215T1G

ON Semiconductor

MUN5215T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

SOT-23

MUN5215T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 202mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MUN52**T
Pin Count 3
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 202mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 10kHz
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 160
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 100mA
Height 850μm
Length 2.2mm
Width 1.24mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.02933 $0.08799
6,000 $0.02655 $0.1593
15,000 $0.02321 $0.34815
30,000 $0.02099 $0.6297
75,000 $0.01876 $1.407
150,000 $0.01579 $2.3685
MUN5215T1G Product Details

MUN5215T1G Description


ON Semiconductor's MUN5215T1G NPN Bipolar Digital Transistor (BRT) is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a single transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. By integrating these different components into a single unit, the BRT eliminates them.



MUN5215T1G Features


  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

  • Simplifies Circuit Design

  • Reduces Board Space

  • Reduces Component Count



MUN5215T1G Applications


  • Industrial

  • Automotive


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