SIRA34DP-T1-GE3

new-10%

Manufacturer part number:SIRA34DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V [email protected] 40A N-Ch G-IV

Case Package:SOT-23

Datasheet:SIRA34DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
JESD-30 Code	R-PDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.3W Ta 31.25W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.3W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.7m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 15V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	+20V, -16V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	-16V
Drain-source On Resistance-Max	0.0067Ohm
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	5 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant