Welcome to Hotenda.com Online Store!

logo
userjoin
Home

TPC8A06-H(TE12LQM)

TPC8A06-H(TE12LQM)

TPC8A06-H(TE12LQM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 12A 8SOP

SOT-23

TPC8A06-H(TE12LQM) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-SOP (5.5x6.0)
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10.1mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 2.4ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.5 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.8nF
FET Feature Schottky Diode (Body)
Rds On Max 10.1 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News