SIHB11N80E-GE3

new-10%

Manufacturer part number:SIHB11N80E-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 800V D2PAK TO-263

Case Package:SOT-23

Datasheet:SIHB11N80E-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK (TO-263)
Operating Temperature	-55°C~150°C TJ
Series	E
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	179W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1670pF @ 100V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	88nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
RoHS Status	ROHS3 Compliant