FQT7N10LTF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQT7N10LTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
188mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
QFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
350mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
1.7A
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Case Connection
DRAIN
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
350m Ω @ 850mA, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
290pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.7A Tc
Gate Charge (Qg) (Max) @ Vgs
6nC @ 5V
Rise Time
100ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
50 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
1.7A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
6.8A
Avalanche Energy Rating (Eas)
50 mJ
Max Junction Temperature (Tj)
150°C
Height
1.8mm
Length
6.5mm
Width
3.56mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FQT7N10LTF Product Details
FQT7N10LTF Description
FQT7N10LTF is an N-channel Power MOSFET from the manufacturer of ON Semiconductor with a voltage of 100V. This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.