NDD04N60Z-1G

new-10%

Manufacturer part number:NDD04N60Z-1G

Manufacturer:ON Semiconductor

Description:MOSFET NFET IPAK 600V 4A 1.8R

Case Package:SOT-23

Datasheet:NDD04N60Z-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 4 days ago)
Contact Plating	Tin
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount	NO
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	2Ohm
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Pin Count	4
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	83W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	83W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.1A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	4.1A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	2.6A
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	20A
Height	6.35mm
Length	6.73mm
Width	2.38mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free