NDD60N360U1-1G

new-10%

Manufacturer part number:NDD60N360U1-1G

Manufacturer:ON Semiconductor

Description:MOSFET NFET DPAK 600V 114A 360MO

Case Package:SOT-23

Datasheet:NDD60N360U1-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount	NO
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	4
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	114W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	114W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	360m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 50V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.36Ohm
DS Breakdown Voltage-Min	600V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free