NDP4060L Description

Logic level N-Channel enhancement mode power field effect transistors are made utilizing a high cell density DMOS process that is exclusive to Fairchild. In the avalanche and commutation modes, this very high density technology has been specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These components are especially well suited for battery-powered circuits that require quick switching, little in-line power loss, and resilience to transients, such as automotive, DC/DC converters, PWM motor controllers, and other battery-powered applications.

NDP4060L Features

• 15A, 60V. RDS(ON) = 0.1W @ VGS = 5V

• Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.

• Critical DC electrical parameters specified at elevated temperature.

• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

• 175°C maximum junction temperature rating.

• High density cell design for extremely low RDS(ON).

• TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

NDP4060L Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial