SIB412DK-T1-GE3

new-10%

Manufacturer part number:SIB412DK-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 9A SC75-6

Case Package:SOT-23

Datasheet:SIB412DK-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L
Number of Pins	6
Supplier Device Package	PowerPAK® SC-75-6L Single
Weight	95.991485mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	34mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	2.4W Ta 13W Tc
Element Configuration	Single
Power Dissipation	2.4W
Turn On Delay Time	6.6 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	34mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	535pF @ 10V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	10.16nC @ 5V
Rise Time	16ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	-4.5A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
Input Capacitance	535pF
Drain to Source Resistance	34mOhm
Rds On Max	34 mΩ
Nominal Vgs	-1.5 V
Height	750μm
Length	1.6mm
Width	1.6mm
RoHS Status	ROHS3 Compliant