NDS352AP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NDS352AP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
500mOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-900mA
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
8 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
300m Ω @ 1A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
135pF @ 15V
Current - Continuous Drain (Id) @ 25°C
900mA Ta
Gate Charge (Qg) (Max) @ Vgs
3nC @ 4.5V
Rise Time
16ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
16 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
900mA
Threshold Voltage
-800mV
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.9A
Drain to Source Breakdown Voltage
-30V
Dual Supply Voltage
-30V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
-1.7 V
Height
1.22mm
Width
3.05mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.566125
$0.566125
10
$0.534080
$5.3408
100
$0.503849
$50.3849
500
$0.475329
$237.6645
1000
$0.448424
$448.424
NDS352AP Product Details
NDS352AP Description
The NDS352AP P-Channel logic level enhancement mode power field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
NDS352AP Features
Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities
High density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability.