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NDS8410

NDS8410

NDS8410

ON Semiconductor

NDS8410 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NDS8410 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) 20V
RoHS Status Non-RoHS Compliant
NDS8410 Product Details

NDS8410 Description


This high cell density, DMOS N-Channel enhancement mode power field effect transistor is made exclusively by Fairchild. Specifically designed to reduce on-state resistance and offer greater switching performance, this extremely high density technology. These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.



NDS8410 Features


  • 10A, 30V. RDS(ON) = 0.015W @ VGS = 10V

  • High density cell design for extremely low RDS(ON).

  • High power and current handling capability in a widely used surface mount package.



NDS8410 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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