IRFBE30STRR

new-10%

Manufacturer part number:IRFBE30STRR

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 800V 4.1A D2PAK

Case Package:SOT-23

Datasheet:IRFBE30STRR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN LEAD
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	THROUGH-HOLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Power Dissipation-Max	125W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.1A Tc
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	4.1A
JEDEC-95 Code	TO-220AB
Drain-source On Resistance-Max	3Ohm
DS Breakdown Voltage-Min	800V
RoHS Status	Non-RoHS Compliant