NDS8435 Description

The SO-8 P-Channel enhancement mode power field effect transistors are made using the high cell density, DMOS technology that is exclusive to Fairchild. Specifically designed to reduce on-state resistance and offer greater switching performance, this extremely high density technology.

These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.

NDS8435 Features

• 7A, -30V. 

• High density cell design for extremely low RDS(ON).

• High power and current handling capability in a widely used surface mount package.

NDS8435 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial