NDS8435 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NDS8435 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
28m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1500pF @ 15V
Current - Continuous Drain (Id) @ 25°C
7A Ta
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Drain to Source Voltage (Vdss)
30V
RoHS Status
Non-RoHS Compliant
NDS8435 Product Details
NDS8435 Description
The SO-8 P-Channel enhancement mode power field effect transistors are made using the high cell density, DMOS technology that is exclusive to Fairchild. Specifically designed to reduce on-state resistance and offer greater switching performance, this extremely high density technology.
These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.
NDS8435 Features
7A, -30V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.