NDS9952A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
SOT-23
NDS9952A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
230.4mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
80MOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
900mW
Terminal Form
GULL WING
Current Rating
2.9A
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
80m Ω @ 1A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
320pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3.7A 2.9A
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
21ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
8 ns
Turn-Off Delay Time
21 ns
Continuous Drain Current (ID)
3.7A
Threshold Voltage
1.7V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
15A
Dual Supply Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
1.7 V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.48264
$0.96528
5,000
$0.45984
$2.2992
12,500
$0.44356
$5.32272
NDS9952A Product Details
NDS9952A Description
These dual N- and P-channel enhancement mode power field effect transistors are made utilizing a high cell density DMOS process that is exclusive to ON Semiconductors. In the avalanche and commutation modes, this very high density technology is specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.
NDS9952A Features
N-Channel 3.7 A, 30 V, RDS(ON) = 0.08 W @ VGS = 10 V.
P-Channel: 2.9A, -30V, 0.13W at -10V for RDS(ON).
High density cell architecture or a very low RDS (ON).
a surface mount package with high power and current handling capacity.
Surface-mount MOSFET with dual (N and P) channels.