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NDT01N60T1G

NDT01N60T1G

NDT01N60T1G

ON Semiconductor

Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R

SOT-23

NDT01N60T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 20 hours ago)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Power Dissipation-Max 2.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 3.7V @ 50μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V
Current - Continuous Drain (Id) @ 25°C 400mA Tc
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V
Rise Time 5.1ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 21.3 ns
Turn-Off Delay Time 16.5 ns
Continuous Drain Current (ID) 400mA
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.465853 $1.465853
10 $1.382880 $13.8288
100 $1.304604 $130.4604
500 $1.230758 $615.379
1000 $1.161093 $1161.093

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