NDT01N60T1G

new-10%

Manufacturer part number:NDT01N60T1G

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R

Case Package:SOT-23

Datasheet:NDT01N60T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 20 hours ago)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	4
Number of Elements	1
Power Dissipation-Max	2.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id	3.7V @ 50μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	160pF @ 25V
Current - Continuous Drain (Id) @ 25°C	400mA Tc
Gate Charge (Qg) (Max) @ Vgs	7.2nC @ 10V
Rise Time	5.1ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	21.3 ns
Turn-Off Delay Time	16.5 ns
Continuous Drain Current (ID)	400mA
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free