SI7115DN-T1-GE3

new-10%

Manufacturer part number:SI7115DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 150V 8.9A 1212-8

Case Package:SOT-23

Datasheet:SI7115DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-50°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	295mOhm
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected]k Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	S-XDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.7W Ta 52W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.7W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	295m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1190pF @ 50V
Current - Continuous Drain (Id) @ 25°C	8.9A Tc
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Rise Time	28ns
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	52 ns
Continuous Drain Current (ID)	2.3A
Threshold Voltage	-2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-150V
Nominal Vgs	-2 V
Height	1.04mm
Length	3.05mm
Width	3.05mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free