NDT453N Description

Using Fairchild's patented, high cell density DMOS technology, power SOT N-Channel enhancement mode power field effect transistors are created. Specifically designed to reduce on-state resistance and offer greater switching performance, this extremely high density technology. These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.

NDT453N Features

• 8A, 30V. RDS(ON) = 0.028W @ VGS = 10V.

• High density cell design for extremely low RDS(ON).

• High power and current handling capability in a widely used surface mount package.

NDT453N Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial