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IXGT32N60BD1

IXGT32N60BD1

IXGT32N60BD1

IXYS

Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-268

SOT-23

IXGT32N60BD1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight 4.500005g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFAST™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*32N60
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 200W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 25 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 50 ns
Test Condition 480V, 32A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 32A
Turn Off Time-Nom (toff) 240 ns
Gate Charge 110nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 25ns/100ns
Switching Energy 600μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 150ns
RoHS Status RoHS Compliant

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