HGTP2N120CN  Description

The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high

voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

HGTP2N120CN  Features

13A, 1200V, TC = 25oC

1200V Switching SOA Capability

Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC

Short Circuit Rating

Low Conduction Loss

Avalanche Rated