NGD8205NT4G

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Manufacturer part number:NGD8205NT4G

Manufacturer:ON Semiconductor

Description:NGD8205NT4G datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGD8205NT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	52 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	350V
Max Power Dissipation	125W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NGD8205N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Rise Time-Max	8000ns
Element Configuration	Single
Power Dissipation	125W
Case Connection	COLLECTOR
Input Type	Logic
Transistor Application	AUTOMOTIVE IGNITION
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	390V
Max Collector Current	20A
Collector Emitter Breakdown Voltage	390V
Max Breakdown Voltage	390V
Turn On Time	6500 ns
Test Condition	300V, 9A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic	1.9V @ 4.5V, 20A
Turn Off Time-Nom (toff)	18500 ns
Current - Collector Pulsed (Icm)	50A
Td (on/off) @ 25°C	-/5μs
Gate-Emitter Voltage-Max	15V
Gate-Emitter Thr Voltage-Max	2.1V
Fall Time-Max (tf)	14000ns
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free