NGTB15N120IHRWG Description

NGTB15N120IHRWG  developed by ON Semiconductor emerges as an Insulated Gate Bipolar Transistor (IGBT) with a robust and cost-effective Field Stop (FS) Trench construction. Both low on?state voltage and minimal switching loss are provided to enable it well suited for resonant or soft switching applications. It is co-packaged with a rugged co?packaged free-wheeling diode featuring a low forward voltage. The NGTB15N120IHRWG is able to provide high efficiency in resonant or soft switching applications.

NGTB15N120IHRWG Features

A rugged co?packaged free wheeling diode

A robust and cost-effective Field Stop (FS) Trench construction

Low on?state voltage 

Minimal switching loss

NGTB15N120IHRWG Applications

Inductive heating

Soft switching

Consumer appliances