STGB30NC60WT4

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Manufacturer part number:STGB30NC60WT4

Manufacturer:STMicroelectronics

Description:STGB30NC60WT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB30NC60WT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Base Part Number	STGB30
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	200W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Turn On Time	42.5 ns
Test Condition	390V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Turn Off Time-Nom (toff)	189 ns
Gate Charge	102nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	29.5ns/118ns
Switching Energy	305μJ (on), 181μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant