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NGTB15N120IHWG

  • NGTB15N120IHWG
  • NGTB15N120IHWG

NGTB15N120IHWG

NGTB15N120IHWG

ON Semiconductor

NGTB15N120IHWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB15N120IHWG Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 29 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 278W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 278W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.45V
Max Collector Current 30A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.1V
Test Condition 600V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 15A
Turn Off Time-Nom (toff) 385 ns
IGBT Type Trench Field Stop
Gate Charge 120nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C -/130ns
Switching Energy 360μJ (off)
Height 21.4mm
Length 16.25mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.989360 $13.98936
10 $13.197509 $131.97509
100 $12.450481 $1245.0481
500 $11.745736 $5872.868
1000 $11.080883 $11080.883
NGTB15N120IHWG Product Details

NGTB15N120IHWG Description


NGTB15N120IHWG developed by ON Semiconductor is a type of Insulated Gate Bipolar Transistor (IGBT) optimized for low losses in IH cooker applications. It is able to provide low on?state voltage with minimal switching loss in demanding switching applications based on its robust and cost-effective Field Stop (FS) Trench construction. System power dissipation can be reduced based on low switching loss. Due to its specific characteristics, the NGTB15N120IHWG IGBT is ideally suitable for resonant or soft switching applications. 



NGTB15N120IHWG Features


Extremely efficient trench with Fieldstop technology

Low switching loss

Low system power dissipation

Low on?state voltage

Package: TO-247



NGTB15N120IHWG Applications


Inductive heating

Consumer appliances

Soft switching


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